The AAT8515 is a P-Channel MOSFET designed for low voltage applications, offering low on-resistance and high current capability.
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The AAT8515 is a P-Channel MOSFET designed for low voltage applications, offering low on-resistance and high current capability. It is suitable for use in battery-powered devices, portable electronics, and other applications where power efficiency is crucial. The device is packaged in a small outline package, making it ideal for space-constrained designs.
| Parameter | Value |
|---|---|
| Drain-Source Voltage | -20V |
| Gate-Source Voltage | ±20V |
| Operating Temperature | -55°C to 150°C |
| Parameter | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| On-Resistance | VGS = -10V, ID = -1A | 0.1Ω | 0.15Ω | 0.2Ω | Ω |
| Drain Current | VDS = -20V, VGS = -10V | -1A | -1.5A | -2A | A |
When designing with the AAT8515, consider the device's low on-resistance and high current capability to ensure efficient power management in your application. Proper thermal management is also crucial to prevent overheating and ensure reliable operation.
The AAT8515 is packaged in a small outline package, making it suitable for space-constrained designs. Ensure proper mounting and soldering techniques to prevent damage to the device or the PCB.
The AAT8515 is a P-Channel MOSFET, and as such, it is essential to consider the device's gate-source voltage and drain-source voltage when designing the application circuit. Proper voltage regulation and current limiting are also crucial to prevent damage to the device or other components in the circuit.