The AAT8303 is a P-Channel MOSFET designed for high-performance applications. It features low on-resistance, high current capability, and a compact TSOP6...
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The AAT8303 is a P-Channel MOSFET designed for high-performance applications. It features low on-resistance, high current capability, and a compact TSOP6 package. This device is suitable for a wide range of applications, including power management, battery-powered devices, and high-frequency switching circuits.
| Parameter | Value |
|---|---|
| Drain-Source Voltage | -20V |
| Gate-Source Voltage | ±10V |
| Operating Temperature | -40°C to 150°C |
| Parameter | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| On-Resistance | VGS = -10V, ID = -1A | 0.15Ω | 0.20Ω | 0.30Ω | Ω |
| Threshold Voltage | VDS = -10V, ID = -1mA | -0.5V | -1.0V | -1.5V | V |
The AAT8303 is a high-performance P-Channel MOSFET designed for a wide range of applications. When designing with this device, consider the operating voltage, current, and switching frequency to ensure optimal performance.
The AAT8303 is available in a compact TSOP6 package. When installing the device, ensure that the package is properly soldered to the PCB to maintain good thermal conductivity.
The AAT8303 is a sensitive device and may be damaged by excessive voltage, current, or temperature. Ensure that the device is operated within the specified absolute maximum ratings to prevent damage.