aat9512 Datasheet - Analogictech
The AAT9512 is an N-Channel MOSFET designed for high-performance applications. It features low on-resistance, high current handling, and a compact package.
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📝 Component Overview
The AAT9512 is an N-Channel MOSFET designed for high-performance applications. It features low on-resistance, high current handling, and a compact package. This device is suitable for a wide range of applications, including power management, battery-powered devices, and high-frequency switching.
Key Features and Benefits
- N-Channel MOSFET
- Low on-resistance
- High current handling
- Compact SC70 package
- Suitable for high-frequency switching
- Low voltage operation
Typical Applications
- Power management
- Battery-powered devices
- High-frequency switching
- Portable electronics
- Telecommunications equipment
- Industrial control systems
📊 Complete Technical Specifications
Absolute Maximum Ratings
| Parameter | Value |
|---|---|
| Drain-Source Voltage | 30V |
| Operating Temperature | -55°C to 150°C |
| Storage Temperature | -55°C to 150°C |
Electrical Characteristics
| Parameter | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| On-Resistance | VGS = 10V, ID = 5.5A | 0.035Ω | 0.045Ω | 0.055Ω | Ω |
| Threshold Voltage | VDS = 10V, ID = 250μA | 0.5V | 1.0V | 1.5V | V |
Package Information
- SC70: Compact surface-mount package
Pin Configuration
- Pin 1: Gate - MOSFET gate terminal
- Pin 2: Drain - MOSFET drain terminal
- Pin 3: Source - MOSFET source terminal
🔧 Application Guidelines
Design Considerations
When designing with the AAT9512, consider the device's high current handling and low on-resistance. Ensure proper thermal management and use a suitable heat sink if necessary.
Installation Guidelines
Follow standard installation procedures for surface-mount devices. Ensure the device is properly aligned and secured to the PCB.
Operational Notes
The AAT9512 is a high-performance device and should be operated within the specified temperature range. Avoid overvoltage and overcurrent conditions.