The AAT8343 is a P-Channel MOSFET designed for high-performance applications. It features low on-resistance, high current handling, and a compact TSOP-6...
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The AAT8343 is a P-Channel MOSFET designed for high-performance applications. It features low on-resistance, high current handling, and a compact TSOP-6 package. This device is suitable for a variety of applications, including power management, battery-powered devices, and high-frequency switching circuits.
| Parameter | Value |
|---|---|
| Drain-Source Voltage | -20V |
| Operating Temperature | -55°C to 150°C |
| Storage Temperature | -55°C to 150°C |
| Parameter | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| On-Resistance | VGS = -10V, ID = -1A | 0.15Ω | 0.25Ω | 0.35Ω | Ω |
| Threshold Voltage | VDS = -20V, ID = -1mA | -2V | -3V | -4V | V |
When designing with the AAT8343, consider the device's high current handling and low on-resistance. Ensure proper thermal management and PCB layout to minimize thermal resistance and maximize device performance.
The AAT8343 is packaged in a compact TSOP-6 package. Ensure proper soldering techniques and handling to prevent damage to the device or PCB.
The AAT8343 is a P-Channel MOSFET, and as such, it is essential to consider the device's gate voltage and current handling when designing the application circuit.