The AAT7551 is a P-Channel MOSFET designed for low voltage applications, offering high performance and efficiency.
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The AAT7551 is a P-Channel MOSFET designed for low voltage applications, offering high performance and efficiency. It is suitable for use in battery-powered devices, portable electronics, and other applications where low power consumption is critical. The device features a low on-resistance, high current capability, and a compact package, making it an ideal choice for space-constrained designs.
| Parameter | Value |
|---|---|
| Drain-Source Voltage | -20V |
| Gate-Source Voltage | ±10V |
| Operating Temperature | -40°C to 150°C |
| Parameter | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| On-Resistance | VGS = -10V, ID = -1A | 0.1Ω | 0.15Ω | 0.2Ω | Ω |
| Drain Current | VDS = -10V, VGS = -10V | -1A | -2A | -3A | A |
When designing with the AAT7551, consider the device's low on-resistance and high current capability to optimize the circuit's performance and efficiency. Ensure proper heat sinking to maintain the device within its operating temperature range.
Follow standard SMD installation procedures to mount the AAT7551 on the PCB. Ensure the device is properly secured to the board and that all connections are made according to the recommended pinout.
The AAT7551 is a P-Channel MOSFET and should be used accordingly in the circuit design. Be aware of the device's absolute maximum ratings and operating conditions to prevent damage and ensure reliable operation.