The AAT7157 is a P-Channel MOSFET designed for high-performance applications. It features low on-resistance, high current capability, and a compact package.
Get the full 6-page technical datasheet in PDF format
The AAT7157 is a P-Channel MOSFET designed for high-performance applications. It features low on-resistance, high current capability, and a compact package. This device is suitable for a wide range of applications, including power management, battery-powered devices, and high-frequency switching.
| Parameter | Value |
|---|---|
| Drain-Source Voltage | -20V |
| Operating Temperature | -55°C to 150°C |
| Storage Temperature | -55°C to 150°C |
| Parameter | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| On-Resistance | VGS = -10V, ID = -4A | 0.1Ω | 0.15Ω | 0.2Ω | Ω |
| Threshold Voltage | VDS = -10V, ID = -1mA | -0.5V | -1V | -1.5V | V |
When designing with the AAT7157, consider the high current capability and low on-resistance. Ensure proper heat sinking and thermal management to maintain reliable operation.
Follow standard SMD installation procedures to ensure reliable mounting and minimize thermal resistance.
The AAT7157 is a P-Channel MOSFET, so ensure the gate voltage is properly controlled to avoid unintended conduction.